2N5962 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 600 @ 10mA 5V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 200mV @ 500μA, 10mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 100mA.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

2N5962 Features

the DC current gain for this device is 600 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 8V
the current rating of this device is 100mA

2N5962 Applications

There are a lot of ON Semiconductor 2N5962 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver