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MJD2955T4

MJD2955T4

MJD2955T4

STMicroelectronics

MJD2955T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website

SOT-23

MJD2955T4 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation20W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJD295
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation20W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
JEDEC-95 Code TO-252AA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
VCEsat-Max 8 V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3892 items

MJD2955T4 Product Details

MJD2955T4 Overview


In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 8V @ 3.3A, 10A.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 2MHz.Input voltage breakdown is available at 60V volts.A maximum collector current of 10A volts can be achieved.

MJD2955T4 Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 2MHz

MJD2955T4 Applications


There are a lot of STMicroelectronics MJD2955T4 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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