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2N6286G

2N6286G

2N6286G

ON Semiconductor

2N6286G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6286G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface MountNO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingTray
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation160W
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating20A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6286
Pin Count2
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 10A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 200mA, 20A
Collector Emitter Breakdown Voltage80V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 20A
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1107 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$7.44000$7.44
10$6.72300$67.23
100$5.56610$556.61
500$4.84686$2423.43

2N6286G Product Details

2N6286G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 10A 3V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 20A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 20A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.The maximum collector current is 20A volts.

2N6286G Features


the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz

2N6286G Applications


There are a lot of ON Semiconductor 2N6286G applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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