2N6286G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 10A 3V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is recommended to keep the continuous collector voltage at 20A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.This device has a current rating of 20A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 4MHz.The maximum collector current is 20A volts.

2N6286G Features

the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz

2N6286G Applications

There are a lot of ON Semiconductor 2N6286G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface