BD540C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD540C-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Subcategory
Other Transistors
Max Power Dissipation
45W
Base Part Number
BD540
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
45W
Case Connection
COLLECTOR
Power - Max
2W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
12 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1A, 5A
Collector Emitter Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD540C-S Product Details
BD540C-S Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 12 @ 3A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 1A, 5A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
BD540C-S Features
the DC current gain for this device is 12 @ 3A 4V the vce saturation(Max) is 1.5V @ 1A, 5A the emitter base voltage is kept at 5V
BD540C-S Applications
There are a lot of Bourns Inc. BD540C-S applications of single BJT transistors.