2N6426RLRA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6426RLRA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 4 days ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6426
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
1.5V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30000 @ 100mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
125MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
12V
Continuous Collector Current
500mA
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.06000
$0.06
500
$0.0594
$29.7
1000
$0.0588
$58.8
1500
$0.0582
$87.3
2000
$0.0576
$115.2
2500
$0.057
$142.5
2N6426RLRA Product Details
2N6426RLRA Overview
This device has a DC current gain of 30000 @ 100mA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.Emitter base voltages of 12V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).In this part, there is a transition frequency of 125MHz.When collector current reaches its maximum, it can reach 500mA volts.
2N6426RLRA Features
the DC current gain for this device is 30000 @ 100mA 5V the vce saturation(Max) is 1.5V @ 500μA, 500mA the emitter base voltage is kept at 12V the current rating of this device is 500mA a transition frequency of 125MHz
2N6426RLRA Applications
There are a lot of ON Semiconductor 2N6426RLRA applications of single BJT transistors.