BSP60H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BSP60H6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
PG-SOT223-4
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
200MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.20000
$0.2
500
$0.198
$99
1000
$0.196
$196
1500
$0.194
$291
2000
$0.192
$384
2500
$0.19
$475
BSP60H6327XTSA1 Product Details
BSP60H6327XTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 2000 @ 500mA 10V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).This product comes in a PG-SOT223-4 device package from the supplier.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BSP60H6327XTSA1 Features
the DC current gain for this device is 2000 @ 500mA 10V the vce saturation(Max) is 1.8V @ 1mA, 1A the supplier device package of PG-SOT223-4
BSP60H6327XTSA1 Applications
There are a lot of Rochester Electronics, LLC BSP60H6327XTSA1 applications of single BJT transistors.