2N6517BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6517BU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
350V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
500mA
Frequency
200MHz
Base Part Number
2N6517
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Gain Bandwidth Product
200MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 50mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
350V
Emitter Base Voltage (VEBO)
6V
hFE Min
30
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.052006
$0.052006
500
$0.038240
$19.12
1000
$0.031867
$31.867
2000
$0.029235
$58.47
5000
$0.027323
$136.615
10000
$0.025417
$254.17
15000
$0.024581
$368.715
50000
$0.024170
$1208.5
2N6517BU Product Details
2N6517BU Overview
In this device, the DC current gain is 20 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.An emitter's base voltage can be kept at 6V to gain high efficiency.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.Collector current can be as low as 500mA volts at its maximum.
2N6517BU Features
the DC current gain for this device is 20 @ 50mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is 500mA a transition frequency of 40MHz
2N6517BU Applications
There are a lot of ON Semiconductor 2N6517BU applications of single BJT transistors.