2N6609 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6609 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2009
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn80Pb20)
Subcategory
Other Transistors
Voltage - Rated DC
-140V
Max Power Dissipation
150W
Terminal Position
BOTTOM
Terminal Form
PIN/PEG
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-16A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2N6609
Pin Count
2
JESD-30 Code
O-MBFM-P2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
16A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 8A 4V
Current - Collector Cutoff (Max)
10mA
Vce Saturation (Max) @ Ib, Ic
4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage
140V
Transition Frequency
4MHz
Collector Emitter Saturation Voltage
1.4V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
7V
hFE Min
15
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.74000
$11.74
20
$10.62250
$212.45
40
$9.72400
$388.96
100
$8.82550
$882.55
260
$8.15146
$2119.3796
500
$7.47756
$3738.78
1,000
$6.57896
$6.57896
2N6609 Product Details
2N6609 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 8A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.4V.When VCE saturation is 4V @ 3.2A, 16A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Its current rating is -16A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In the part, the transition frequency is 4MHz.A maximum collector current of 16A volts is possible.
2N6609 Features
the DC current gain for this device is 15 @ 8A 4V a collector emitter saturation voltage of 1.4V the vce saturation(Max) is 4V @ 3.2A, 16A the emitter base voltage is kept at 7V the current rating of this device is -16A a transition frequency of 4MHz
2N6609 Applications
There are a lot of ON Semiconductor 2N6609 applications of single BJT transistors.