KSH2955TM datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSH2955TM Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
-10A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSH2955
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.75W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
2MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
-1.1V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
-70V
Emitter Base Voltage (VEBO)
-5V
hFE Min
20
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.439416
$0.439416
10
$0.414543
$4.14543
100
$0.391079
$39.1079
500
$0.368942
$184.471
1000
$0.348059
$348.059
KSH2955TM Product Details
KSH2955TM Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -1.1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -10A.The part has a transition frequency of 2MHz.Breakdown input voltage is 60V volts.A maximum collector current of 10A volts can be achieved.
KSH2955TM Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of -1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at -5V the current rating of this device is -10A a transition frequency of 2MHz
KSH2955TM Applications
There are a lot of ON Semiconductor KSH2955TM applications of single BJT transistors.