2N6667G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6667G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
2W
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6667
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 100mA, 10A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
1000
Continuous Collector Current
10A
Height
15.75mm
Length
10.53mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.89000
$0.89
50
$0.75740
$37.87
100
$0.62210
$62.21
500
$0.51392
$256.96
2N6667G Product Details
2N6667G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Continuous collector voltages should be kept at 10A to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -10A.During maximum operation, collector current can be as low as 10A volts.
2N6667G Features
the DC current gain for this device is 1000 @ 5A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 3V @ 100mA, 10A the emitter base voltage is kept at 5V the current rating of this device is -10A
2N6667G Applications
There are a lot of ON Semiconductor 2N6667G applications of single BJT transistors.