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BD239C-S

BD239C-S

BD239C-S

Bourns Inc.

BD239C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD239C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation30W
Base Part Number BD239
Number of Elements 1
Element ConfigurationSingle
Power Dissipation30W
Power - Max 2W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage100V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:1849 items

BD239C-S Product Details

BD239C-S Overview


In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In extreme cases, the collector current can be as low as 2A volts.

BD239C-S Features


the DC current gain for this device is 15 @ 1A 4V
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V

BD239C-S Applications


There are a lot of Bourns Inc. BD239C-S applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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