BD239C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
BD239C-S Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
1993
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
30W
Base Part Number
BD239
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Power - Max
2W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 4V
Current - Collector Cutoff (Max)
300μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
100V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
BD239C-S Product Details
BD239C-S Overview
In this device, the DC current gain is 15 @ 1A 4V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 200mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In extreme cases, the collector current can be as low as 2A volts.
BD239C-S Features
the DC current gain for this device is 15 @ 1A 4V the vce saturation(Max) is 700mV @ 200mA, 1A the emitter base voltage is kept at 5V
BD239C-S Applications
There are a lot of Bourns Inc. BD239C-S applications of single BJT transistors.