2N7000TA Description
These high cell density, DMOS N-channel enhancement mode field effect transistors are made only by ON Semiconductor. These devices' on-state resistance has been minimized while still offering robust, dependable, and quick switching performance. They can deliver pulsed currents up to 2 A and can be employed in the majority of applications requiring up to 400 mA DC. These components are best suited for low-voltage, low-current uses including power MOSFET gate drivers, small servo motor control, and other switching applications.
2N7000TA Features
? Low RDS High Density Cell Design (ON)
? Switches with voltage control for small signals
? Tough and Dependable
? High Current Saturation Capability
2N7000TA Applications
Switching applications
