2N7000TA

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Manufacturer part number:2N7000TA

Manufacturer:ON Semiconductor

Description:2N7000TA datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2N7000TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins	3
Manufacturer Package Identifier	TO-92 3L
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Box (TB)
Published	2013
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	5Ohm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	200mA
Base Part Number	2N7000
Number of Elements	1
Power Dissipation-Max	400mW Ta
Element Configuration	Single
Power Dissipation	400mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Tc
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	200mA
Threshold Voltage	3.9V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.2A
Drain to Source Breakdown Voltage	60V
Height	5.33mm
Length	5.2mm
Width	4.19mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free