CSD16323Q3

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CSD16323Q3

Manufacturer part number:CSD16323Q3

Manufacturer:Texas Instruments

Description:CSD16323Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD16323Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD16323
Pin Count	8
Number of Elements	1
Power Dissipation-Max	3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	5.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.5m Ω @ 24A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1300pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C	21A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	8.4nC @ 4.5V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	3V 8V
Vgs (Max)	+10V, -8V
Fall Time (Typ)	6.3 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Nominal Vgs	1.1 V
Feedback Cap-Max (Crss)	65 pF
Height	1.1mm
Length	3.3mm
Width	3.3mm
Thickness	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead