2SB1260T100P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 82 @ 100mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Maintaining the continuous collector voltage at -1A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1A).As a result, the part has a transition frequency of 100MHz.Maximum collector currents can be below 1A volts.
2SB1260T100P Features
the DC current gain for this device is 82 @ 100mA 3V
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
2SB1260T100P Applications
There are a lot of ROHM Semiconductor 2SB1260T100P applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
