2SB1201T-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SB1201T-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Frequency
150MHz
Base Part Number
2SB1201
Pin Count
3
Number of Elements
1
Power Dissipation
800mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Current - Collector (Ic) (Max)
2A
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.269549
$3.269549
10
$3.084480
$30.8448
100
$2.909887
$290.9887
500
$2.745176
$1372.588
1000
$2.589789
$2589.789
2SB1201T-TL-E Product Details
2SB1201T-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 1A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In extreme cases, the collector current can be as low as 2A volts.
2SB1201T-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 700mV @ 50mA, 1A the emitter base voltage is kept at 6V
2SB1201T-TL-E Applications
There are a lot of ON Semiconductor 2SB1201T-TL-E applications of single BJT transistors.