MJD122T4G

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Manufacturer part number:MJD122T4G

Manufacturer:ON Semiconductor

Description:MJD122T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MJD122T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	100V
Max Power Dissipation	1.75W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	8A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MJD122
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	20W
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	NPN - Darlington
Collector Emitter Voltage (VCEO)	100V
Max Collector Current	8A
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A 4V
Current - Collector Cutoff (Max)	10μA
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A
Collector Emitter Breakdown Voltage	100V
Transition Frequency	4MHz
Collector Emitter Saturation Voltage	2V
Max Breakdown Voltage	100V
Frequency - Transition	4MHz
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	5V
Continuous Collector Current	8A
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free