2SB1202S-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 5A volts can be achieved.
2SB1202S-E Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at -6V
2SB1202S-E Applications
There are a lot of ON Semiconductor 2SB1202S-E applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
