2SB1203T-H Overview

In this device, the DC current gain is 200 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 150mA, 3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.There is a transition frequency of 130MHz in the part.The maximum collector current is 5A volts.

2SB1203T-H Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz

2SB1203T-H Applications

There are a lot of ON Semiconductor 2SB1203T-H applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface