2SB1203T-TL-H Overview

DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.When VCE saturation is 550mV @ 150mA, 3A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

2SB1203T-TL-H Features

the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V

2SB1203T-TL-H Applications

There are a lot of ON Semiconductor 2SB1203T-TL-H applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting