2SB817C-1E Overview

In this device, the DC current gain is 100 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 500mA, 5A.Single BJT transistor is recommended to keep the continuous collector voltage at 12A in order to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.In this part, there is a transition frequency of 10MHz.When collector current reaches its maximum, it can reach 12A volts.

2SB817C-1E Features

the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 500mA, 5A
the emitter base voltage is kept at 6V
a transition frequency of 10MHz

2SB817C-1E Applications

There are a lot of ON Semiconductor 2SB817C-1E applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface