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KSB601OTU

KSB601OTU

KSB601OTU

ON Semiconductor

KSB601OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSB601OTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSB601
Power - Max 1.5W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 3000 @ 3A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 5A
KSB601OTU Product Details

KSB601OTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 3000 @ 3A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.Supplier package TO-220-3 contains the product.There is a 100V maximal voltage in the device due to collector-emitter breakdown.

KSB601OTU Features


the DC current gain for this device is 3000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
the supplier device package of TO-220-3

KSB601OTU Applications


There are a lot of ON Semiconductor KSB601OTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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