KSB601OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSB601OTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSB601
Power - Max
1.5W
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
3000 @ 3A 2V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
5A
KSB601OTU Product Details
KSB601OTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 3000 @ 3A 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 3mA, 3A.Supplier package TO-220-3 contains the product.There is a 100V maximal voltage in the device due to collector-emitter breakdown.
KSB601OTU Features
the DC current gain for this device is 3000 @ 3A 2V the vce saturation(Max) is 1.5V @ 3mA, 3A the supplier device package of TO-220-3
KSB601OTU Applications
There are a lot of ON Semiconductor KSB601OTU applications of single BJT transistors.