2SC3503CSTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC3503CSTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
7W
Frequency
150MHz
Base Part Number
2SC3503
Number of Elements
1
Element Configuration
Single
Power Dissipation
7W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Transition Frequency
150MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
RoHS Status
RoHS Compliant
2SC3503CSTU Product Details
2SC3503CSTU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 10mA 10V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 2mA, 20mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.There is a transition frequency of 150MHz in the part.Maximum collector currents can be below 100mA volts.
2SC3503CSTU Features
the DC current gain for this device is 40 @ 10mA 10V the vce saturation(Max) is 600mV @ 2mA, 20mA the emitter base voltage is kept at 5V a transition frequency of 150MHz
2SC3503CSTU Applications
There are a lot of ON Semiconductor 2SC3503CSTU applications of single BJT transistors.