BUL1403ED datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL1403ED Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
650V
Max Power Dissipation
80W
Current Rating
3A
Base Part Number
BUL140
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
80W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 400mA 3V
Current - Collector Cutoff (Max)
1mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
650V
Collector Base Voltage (VCBO)
1.4kV
Emitter Base Voltage (VEBO)
11V
hFE Min
15
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.916640
$3.91664
10
$3.694943
$36.94943
100
$3.485796
$348.5796
500
$3.288486
$1644.243
1000
$3.102346
$3102.346
BUL1403ED Product Details
BUL1403ED Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 400mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 50mA, 500mA.If the emitter base voltage is kept at 11V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.A maximum collector current of 3A volts can be achieved.
BUL1403ED Features
the DC current gain for this device is 15 @ 400mA 3V the vce saturation(Max) is 2.5V @ 50mA, 500mA the emitter base voltage is kept at 11V the current rating of this device is 3A
BUL1403ED Applications
There are a lot of STMicroelectronics BUL1403ED applications of single BJT transistors.