2SC3646S-P-TD-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC3646S-P-TD-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
500mW
Power - Max
500mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2SC3646S-P-TD-E Product Details
2SC3646S-P-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 100mA 5V.When VCE saturation is 400mV @ 40mA, 400mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SC3646S-P-TD-E Features
the DC current gain for this device is 140 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 400mA
2SC3646S-P-TD-E Applications
There are a lot of ON Semiconductor 2SC3646S-P-TD-E applications of single BJT transistors.