This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.A 200mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 4V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 50nA volts at Single BJT transistors maximum.
2N4126 Features
a collector emitter saturation voltage of 400mV the emitter base voltage is kept at 4V a transition frequency of 250MHz
2N4126 Applications
There are a lot of Central Semiconductor 2N4126 applications of single BJT transistors.