2SC4134T-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC4134T-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
800mW
Base Part Number
2SC4134
Pin Count
3
Configuration
Single
Power - Max
800mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
120MHz
Collector Base Voltage (VCBO)
120V
Emitter Base Voltage (VEBO)
6V
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.500074
$2.500074
10
$2.358560
$23.5856
100
$2.225057
$222.5057
500
$2.099110
$1049.555
1000
$1.980292
$1980.292
2SC4134T-E Product Details
2SC4134T-E Overview
This device has a DC current gain of 200 @ 100mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 40mA, 400mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.A maximum collector current of 1A volts is possible.
2SC4134T-E Features
the DC current gain for this device is 200 @ 100mA 5V the vce saturation(Max) is 400mV @ 40mA, 400mA the emitter base voltage is kept at 6V
2SC4134T-E Applications
There are a lot of ON Semiconductor 2SC4134T-E applications of single BJT transistors.