2SC5707-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.As it features a collector emitter saturation voltage of 110mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 240mV @ 175mA, 3.5A.Emitter base voltages of 6V can achieve high levels of efficiency.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

2SC5707-E Features

the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 110mV
the vce saturation(Max) is 240mV @ 175mA, 3.5A
the emitter base voltage is kept at 6V

2SC5707-E Applications

There are a lot of ON Semiconductor 2SC5707-E applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter