2SC6097-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SC6097-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Terminal Position
SINGLE
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power Dissipation
800mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
135mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
390MHz
Frequency - Transition
390MHz
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
6.5V
hFE Min
300
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.68000
$0.68
10
$0.58000
$5.8
100
$0.43340
$43.34
500
$0.34050
$170.25
2SC6097-E Product Details
2SC6097-E Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 135mV @ 100mA, 1A.An emitter's base voltage can be kept at 6.5V to gain high efficiency.The part has a transition frequency of 390MHz.In extreme cases, the collector current can be as low as 3A volts.
2SC6097-E Features
the DC current gain for this device is 300 @ 100mA 2V the vce saturation(Max) is 135mV @ 100mA, 1A the emitter base voltage is kept at 6.5V a transition frequency of 390MHz
2SC6097-E Applications
There are a lot of ON Semiconductor 2SC6097-E applications of single BJT transistors.