MJE344 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MJE344 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
20W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
1mA
Vce Saturation (Max) @ Ib, Ic
1V @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
200V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
15MHz
Frequency - Transition
15MHz
RoHS Status
Non-RoHS Compliant
MJE344 Product Details
MJE344 Overview
In this device, the DC current gain is 30 @ 50mA 10V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.Parts of this part have transition frequencies of 15MHz.The device has a 200V maximal voltage - Collector Emitter Breakdown.
MJE344 Features
the DC current gain for this device is 30 @ 50mA 10V the vce saturation(Max) is 1V @ 5mA, 50mA a transition frequency of 15MHz
MJE344 Applications
There are a lot of Rochester Electronics, LLC MJE344 applications of single BJT transistors.