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2SD1012F-SPA

2SD1012F-SPA

2SD1012F-SPA

ON Semiconductor

2SD1012F-SPA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1012F-SPA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case 3-SIP
Surface Mount NO
Number of Pins 3
Operating Temperature 125°C TJ
Packaging Bulk
Published 2012
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory Other Transistors
Max Power Dissipation 250mW
Base Part Number 2SD1012
Pin Count 3
Configuration Single
Power - Max 250mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 80mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Frequency - Transition 250MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
hFE Min 160
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.785760 $3.78576
10 $3.571472 $35.71472
100 $3.369313 $336.9313
500 $3.178597 $1589.2985
1000 $2.998677 $2998.677
2SD1012F-SPA Product Details

2SD1012F-SPA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 50mA 2V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 80mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 700mA volts can be achieved.

2SD1012F-SPA Features


the DC current gain for this device is 160 @ 50mA 2V
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SD1012F-SPA Applications


There are a lot of ON Semiconductor 2SD1012F-SPA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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