2SD1012F-SPA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1012F-SPA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
3-SIP
Surface Mount
NO
Number of Pins
3
Operating Temperature
125°C TJ
Packaging
Bulk
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Subcategory
Other Transistors
Max Power Dissipation
250mW
Base Part Number
2SD1012
Pin Count
3
Configuration
Single
Power - Max
250mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
15V
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 50mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
80mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
15V
Frequency - Transition
250MHz
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.785760
$3.78576
10
$3.571472
$35.71472
100
$3.369313
$336.9313
500
$3.178597
$1589.2985
1000
$2.998677
$2998.677
2SD1012F-SPA Product Details
2SD1012F-SPA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 50mA 2V DC current gain.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 80mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 700mA volts can be achieved.
2SD1012F-SPA Features
the DC current gain for this device is 160 @ 50mA 2V the vce saturation(Max) is 80mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SD1012F-SPA Applications
There are a lot of ON Semiconductor 2SD1012F-SPA applications of single BJT transistors.