2SD1060S-1EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1060S-1EX Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tube
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.75W
Power - Max
1.75W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 1A 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
30MHz
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
RoHS Compliant
2SD1060S-1EX Product Details
2SD1060S-1EX Overview
This device has a DC current gain of 140 @ 1A 2V, which is the ratio between the base current and the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
2SD1060S-1EX Features
the DC current gain for this device is 140 @ 1A 2V the vce saturation(Max) is 300mV @ 300mA, 3A
2SD1060S-1EX Applications
There are a lot of ON Semiconductor 2SD1060S-1EX applications of single BJT transistors.