DSA2G01B0L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Panasonic Electronic Components stock available on our website
SOT-23
DSA2G01B0L Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
HTS Code
8541.21.00.75
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100mV
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 1mA 10V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
100mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
20V
Max Frequency
300MHz
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
-100mV
Max Breakdown Voltage
20V
Frequency - Transition
300MHz
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
Height
1.1mm
Length
2.9mm
Width
1.5mm
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6,000
$0.04116
$0.24696
DSA2G01B0L Product Details
DSA2G01B0L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 1mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.The maximum collector current is 30mA volts.
DSA2G01B0L Features
the DC current gain for this device is 70 @ 1mA 10V a collector emitter saturation voltage of -100mV the vce saturation(Max) is 100mV @ 1mA, 10mA the emitter base voltage is kept at -5V a transition frequency of 300MHz
DSA2G01B0L Applications
There are a lot of Panasonic Electronic Components DSA2G01B0L applications of single BJT transistors.