DSA2G01B0L Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 1mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of -100mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 1mA, 10mA.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 300MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.The maximum collector current is 30mA volts.
DSA2G01B0L Features
the DC current gain for this device is 70 @ 1mA 10V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 100mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
DSA2G01B0L Applications
There are a lot of Panasonic Electronic Components DSA2G01B0L applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
