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2SD1207T

2SD1207T

2SD1207T

ON Semiconductor

2SD1207T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1207T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Terminal Position BOTTOM
Reach Compliance Code compliant
Base Part Number 2SD1207
Pin Count 3
JESD-30 Code O-PBCY-T3
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 2A
Transition Frequency 150MHz
Frequency - Transition 150MHz
Power Dissipation-Max (Abs) 1W
RoHS Status RoHS Compliant
2SD1207T Product Details

2SD1207T Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 1A.There is a transition frequency of 150MHz in the part.There is a 50V maximal voltage in the device due to collector-emitter breakdown.

2SD1207T Features


the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
a transition frequency of 150MHz

2SD1207T Applications


There are a lot of ON Semiconductor 2SD1207T applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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