2SD1207T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1207T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2008
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Terminal Position
BOTTOM
Reach Compliance Code
compliant
Base Part Number
2SD1207
Pin Count
3
JESD-30 Code
O-PBCY-T3
Number of Elements
1
Configuration
SINGLE
Power - Max
1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
2A
Transition Frequency
150MHz
Frequency - Transition
150MHz
Power Dissipation-Max (Abs)
1W
RoHS Status
RoHS Compliant
2SD1207T Product Details
2SD1207T Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 1A.There is a transition frequency of 150MHz in the part.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2SD1207T Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 400mV @ 50mA, 1A a transition frequency of 150MHz
2SD1207T Applications
There are a lot of ON Semiconductor 2SD1207T applications of single BJT transistors.