ECH8102-TL-H Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -6V for high efficiency.In the part, the transition frequency is 140MHz.Input voltage breakdown is available at 30V volts.When collector current reaches its maximum, it can reach 12A volts.
ECH8102-TL-H Features
the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 135mV @ 300mA, 6A
the emitter base voltage is kept at -6V
a transition frequency of 140MHz
ECH8102-TL-H Applications
There are a lot of ON Semiconductor ECH8102-TL-H applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
