2SD1815S-TL-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1815S-TL-H Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
2SD1815
Configuration
Single
Power - Max
1W
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400mV
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 1.5A
Collector Emitter Breakdown Voltage
100V
Frequency - Transition
180MHz
Emitter Base Voltage (VEBO)
6V
hFE Min
70
RoHS Status
RoHS Compliant
Lead Free
Lead Free
2SD1815S-TL-H Product Details
2SD1815S-TL-H Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 1.5A.An emitter's base voltage can be kept at 6V to gain high efficiency.Collector current can be as low as 3A volts at its maximum.
2SD1815S-TL-H Features
the DC current gain for this device is 140 @ 500mA 5V the vce saturation(Max) is 400mV @ 150mA, 1.5A the emitter base voltage is kept at 6V
2SD1815S-TL-H Applications
There are a lot of ON Semiconductor 2SD1815S-TL-H applications of single BJT transistors.