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2SD1816S-E

  • 2SD1816S-E
  • 2SD1816S-E

2SD1816S-E

2SD1816S-E

ON Semiconductor

2SD1816S-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1816S-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1W
Reach Compliance Code not_compliant
Frequency 180MHz
Base Part Number 2SD1816
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 180MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.066880 $0.06688
500 $0.049176 $24.588
1000 $0.040980 $40.98
2000 $0.037597 $75.194
5000 $0.035137 $175.685
10000 $0.032686 $326.86
15000 $0.031611 $474.165
50000 $0.031082 $1554.1
2SD1816S-E Product Details

2SD1816S-E Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 70 @ 500mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.As a result, the part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2SD1816S-E Features


the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2SD1816S-E Applications


There are a lot of ON Semiconductor 2SD1816S-E applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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