2SD1816S-H Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 200mA, 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.The part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

2SD1816S-H Features

the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2SD1816S-H Applications

There are a lot of ON Semiconductor 2SD1816S-H applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface