STD01P datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Sanken stock available on our website
SOT-23
STD01P Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-5
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Power Dissipation
100W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-PSFM-T4
Qualification Status
Not Qualified
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Power - Max
100W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
5000 @ 6A 4V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 6mA, 6A
Collector Emitter Breakdown Voltage
150V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$20.238160
$20.23816
10
$19.092604
$190.92604
100
$18.011890
$1801.189
500
$16.992349
$8496.1745
1000
$16.030518
$16030.518
STD01P Product Details
STD01P Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 5000 @ 6A 4V.When VCE saturation is 2V @ 6mA, 6A, transistor means Ic has reached transistors maximum value (saturated).A maximum collector current of 10A volts can be achieved.
STD01P Features
the DC current gain for this device is 5000 @ 6A 4V the vce saturation(Max) is 2V @ 6mA, 6A
STD01P Applications
There are a lot of Sanken STD01P applications of single BJT transistors.