2SD1835T-AA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 2V.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 6V to achieve high efficiency.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SD1835T-AA Features

the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V

2SD1835T-AA Applications

There are a lot of ON Semiconductor 2SD1835T-AA applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter