CPH3216-TL-E Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.A collector emitter saturation voltage of 130mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 190mV @ 10mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 420MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.In extreme cases, the collector current can be as low as 1A volts.

CPH3216-TL-E Features

the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 190mV @ 10mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 420MHz

CPH3216-TL-E Applications

There are a lot of ON Semiconductor CPH3216-TL-E applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting