2SJ656

new-10%

Manufacturer part number:2SJ656

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 100V 18A TO-220ML

Case Package:SOT-23

Datasheet:2SJ656 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2004
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Terminal Finish	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	2W Ta 30W Tc
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	2W
Case Connection	ISOLATED
Turn On Delay Time	30 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	75.5m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 20V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	110ns
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	125 ns
Turn-Off Delay Time	340 ns
Continuous Drain Current (ID)	18A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.104Ohm
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	72A
Dual Supply Voltage	100V
Nominal Vgs	2.6 V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free