3LN01C-TB-E

new-10%

Manufacturer part number:3LN01C-TB-E

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 150MA 3CP

Case Package:SOT-23

Datasheet:3LN01C-TB-E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Bismuth (Sn/Bi)
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.7 Ω @ 80mA, 4V
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 10V
Current - Continuous Drain (Id) @ 25°C	150mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.58nC @ 10V
Rise Time	65ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4V
Vgs (Max)	±10V
Fall Time (Typ)	120 ns
Turn-Off Delay Time	155 ns
Continuous Drain Current (ID)	150mA
Gate to Source Voltage (Vgs)	10V
Drain Current-Max (Abs) (ID)	0.15A
Height	1.1mm
Length	2.9mm
Width	1.5mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free