SI1065X-T1-E3

new-10%

Manufacturer part number:SI1065X-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 1.18A SOT563F

Case Package:SOT-23

Datasheet:SI1065X-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Supplier Device Package	SC-89-6
Weight	32.006612mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	130MOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	236mW Ta
Element Configuration	Single
Power Dissipation	236mW
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	156mOhm @ 1.18A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	480pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	10.8nC @ 5V
Rise Time	27ns
Drain to Source Voltage (Vdss)	12V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	1.18A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-12V
Input Capacitance	480pF
Drain to Source Resistance	204mOhm
Rds On Max	156 mΩ
Height	600μm
Length	1.7mm
Width	1.2mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free