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6HP04MH-TL-W

6HP04MH-TL-W

6HP04MH-TL-W

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 4.2 Ω @ 190mA, 10V ±20V 24.1pF @ 20V 0.84nC @ 10V 60V 3-SMD, Flat Lead

SOT-23

6HP04MH-TL-W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Factory Lead Time 14 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Weight 124.596154mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Number of Channels 1
Power Dissipation-Max 600mW Ta
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 18.4 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.2 Ω @ 190mA, 10V
Input Capacitance (Ciss) (Max) @ Vds 24.1pF @ 20V
Current - Continuous Drain (Id) @ 25°C 370mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.84nC @ 10V
Rise Time 15.2ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 113 ns
Continuous Drain Current (ID) 370mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.37A
Drain to Source Breakdown Voltage -60V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.11798 $0.35394
6,000 $0.11083 $0.66498
15,000 $0.10368 $1.5552
30,000 $0.09510 $2.853
75,000 $0.09152 $6.864
6HP04MH-TL-W Product Details

6HP04MH-TL-W Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 24.1pF @ 20V.This device conducts a continuous drain current (ID) of 370mA, which is the maximum continuous current transistor can conduct.Using VGS=-60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -60V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.37A.When the device is turned off, a turn-off delay time of 113 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 4V 10V volts (4V 10V).

6HP04MH-TL-W Features


a continuous drain current (ID) of 370mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 113 ns
a 60V drain to source voltage (Vdss)


6HP04MH-TL-W Applications


There are a lot of ON Semiconductor
6HP04MH-TL-W applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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