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BC327-25ZL1G

BC327-25ZL1G

BC327-25ZL1G

ON Semiconductor

BC327-25ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC327-25ZL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature EUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -800mA
Frequency 260MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC327
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Power - Max 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 260MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 260MHz
Collector Emitter Saturation Voltage -700mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) 5V
hFE Min 160
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.267481 $0.267481
10 $0.252341 $2.52341
100 $0.238057 $23.8057
500 $0.224582 $112.291
1000 $0.211869 $211.869
BC327-25ZL1G Product Details

BC327-25ZL1G Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.260MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.

BC327-25ZL1G Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -800mA
a transition frequency of 260MHz

BC327-25ZL1G Applications


There are a lot of ON Semiconductor BC327-25ZL1G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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