BC327-25ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BC327-25ZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 4 days ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
EUROPEAN PART NUMBER
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-800mA
Frequency
260MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC327
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.5W
Power - Max
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
260MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
260MHz
Collector Emitter Saturation Voltage
-700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.267481
$0.267481
10
$0.252341
$2.52341
100
$0.238057
$23.8057
500
$0.224582
$112.291
1000
$0.211869
$211.869
BC327-25ZL1G Product Details
BC327-25ZL1G Overview
This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 700mV @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is -800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.260MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 800mA volts.
BC327-25ZL1G Features
the DC current gain for this device is 160 @ 100mA 1V a collector emitter saturation voltage of -700mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -800mA a transition frequency of 260MHz
BC327-25ZL1G Applications
There are a lot of ON Semiconductor BC327-25ZL1G applications of single BJT transistors.