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TN2219A

TN2219A

TN2219A

ON Semiconductor

TN2219A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TN2219A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 1A
TN2219A Product Details

TN2219A Overview


This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1V @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

TN2219A Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA

TN2219A Applications


There are a lot of ON Semiconductor TN2219A applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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