BC327BU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC327BU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-800mA
Frequency
100MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC327
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
100MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
-700mV
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
4.58mm
Length
4.58mm
Width
3.86mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.031857
$0.031857
500
$0.023424
$11.712
1000
$0.019520
$19.52
2000
$0.017908
$35.816
5000
$0.016737
$83.685
10000
$0.015569
$155.69
15000
$0.015057
$225.855
50000
$0.014805
$740.25
BC327BU Product Details
BC327BU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.The current rating of this fuse is -800mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 100MHz in the part.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.
BC327BU Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of -700mV the vce saturation(Max) is 700mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -800mA a transition frequency of 100MHz
BC327BU Applications
There are a lot of ON Semiconductor BC327BU applications of single BJT transistors.