BDX34BG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BDX34BG Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
6.000006g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
70W
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BDX34
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
70W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Height
15.75mm
Length
10.53mm
Width
4.83mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.070880
$6.07088
10
$5.727245
$57.27245
100
$5.403062
$540.3062
500
$5.097228
$2548.614
1000
$4.808706
$4808.706
BDX34BG Product Details
BDX34BG Overview
In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Collector current can be as low as 10A volts at its maximum.
BDX34BG Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 6mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -10A a transition frequency of 3MHz
BDX34BG Applications
There are a lot of ON Semiconductor BDX34BG applications of single BJT transistors.