BC337-16RL1G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.As you can see, the part has a transition frequency of 210MHz.Single BJT transistor is possible to have a collector current as low as 800mA volts at Single BJT transistors maximum.

BC337-16RL1G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 800mA
a transition frequency of 210MHz

BC337-16RL1G Applications

There are a lot of ON Semiconductor BC337-16RL1G applications of single BJT transistors.

• Muting
• Interface
• Inverter
• Driver