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BC369ZL1G

BC369ZL1G

BC369ZL1G

ON Semiconductor

BC369ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC369ZL1G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 23 hours ago)
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 65MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC369
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 56MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 5V
hFE Min 50
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.242338 $0.242338
10 $0.228621 $2.28621
100 $0.215680 $21.568
500 $0.203472 $101.736
1000 $0.191954 $191.954
BC369ZL1G Product Details

BC369ZL1G Overview


This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.65MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

BC369ZL1G Features


the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 65MHz

BC369ZL1G Applications


There are a lot of ON Semiconductor BC369ZL1G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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