BC369ZL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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BC369ZL1G Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 23 hours ago)
Contact Plating
Copper, Silver, Tin
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
-1A
Frequency
65MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BC369
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
56MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.242338
$0.242338
10
$0.228621
$2.28621
100
$0.215680
$21.568
500
$0.203472
$101.736
1000
$0.191954
$191.954
BC369ZL1G Product Details
BC369ZL1G Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -1A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.65MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 20V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
BC369ZL1G Features
the DC current gain for this device is 85 @ 500mA 1V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V the current rating of this device is -1A a transition frequency of 65MHz
BC369ZL1G Applications
There are a lot of ON Semiconductor BC369ZL1G applications of single BJT transistors.